Thermal Characterization of Composite GaN Substrates for HEMT Applications
نویسندگان
چکیده
High-power operation of AlGaN/GaN highelectron-mobility transistors (HEMTs) requires efficient heat removal through the substrate. GaN composite substrates including high-thermal-conductivity substrates such as SiC and diamond are promising, but these composite substrates require careful attention to thermal resistances at GaN-substrate interfaces. We report on thermal characterization of GaN-on-SiC and GaN-ondiamond substrates using a combination of picosecond time-domain thermoreflectance (TDTR) and DC Joule heating techniques.
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High-power operation of AlGaN/GaN high-electronmobility transistors (HEMTs) requires efficient heat removal through the substrate. GaN composite substrates, including the high-thermal-conductivity diamond, are promising, but high thermal resistances at the interfaces between the GaN and diamond can offset the benefit of a diamond substrate. We report on measurements of thermal resistances at Ga...
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